Ассортимент

SEMICONDUCTOR MATERIAL,

MONODISPERSE NANOPATICLES

ANTI-GLARE COATING

FUNCTIONAL COATING

 


Лучшие решения и уникальные материалы от ведущего корейского химического концерна DNF.


  1. Полупроводниковые материалы (Product List by element)  
    Al — алюминий,  Ru — рутений,  Ti — титаниум,  Si — кремний,
    C — углерод, Cu — медь,  Ge — германий,  Zr — цирконий,
    Nb — ниобий,  Sb — сурьма, Ta — тантал,  Te — теллур,
    Hf — гафний,  Co — кобальт,  Ni — никель, Se — селен,  W — вольфрам
  2. Полупроводниковые Double Patterning Tech. Materials
  3. Диффузионные барьерные материалы для полупроводников (Barrier Metal) 
  4. Electrode Material для микроэлектроники  
  5. Etch Hard Mask Film для микроэлектроники 
  6. GST материалы для нового типа энергонезависимой памяти PRAM 
  7. Gap Fill Materials для микроэлектроники 
  8. High-k for Capacitor  для микроэлектроники  
  9. High-k for Metal Gate  для микроэлектроники  
  10. Low-k  для микроэлектроники  
  11. Metallization Metal  для микроэлектроники  
  12. Low Temp. SiO2/SiN для микроэлектроники  
  13. SOC Material(Spin On Carbon Hardmask)  для микроэлектроники  
  14. Monodisperse Nanoparticles   
  15. Антибликовое покрытие для дисплеев   
  16. Функциональные защитные покрытия на основе полисилазанов и нано-материалов   

 


Полупроводниковые материалы

Product List by element

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Химический Элемент Название / формула / CAS Применение
Al Alpis-3,

C3H15AlBN,

CAS № 92275-85-9

Trimethylaminealaneborane

Metallization Metal
TMA,    

C3H9Al

CAS № 75-24-1

Trimethylaluminum

High-k for Capacitor
Metallization Metal
DMEAA,

C4H14AlN ( C2H5N(CH3)2∙AlH3 )

CAS № 124330-23-0

Dimethylethylamine Alane

Metallization Metal
DMAH,

C2H7Al,

CAS № 865-37-2

Dimethylaluminum hydride

Metallization Metal

Ru Ru(EtCp)2,       

(C7H9)2Ru (Ru(EtCp)2), C14H18Ru

CAS № 32992-96-4

Bis(ethylcyclopentadienyl)ruthenium (II)

Barrier Metal
Electrode Material
Ru-4,   

C16H22Ru,

Ru(CH(CH3)2C6H4CH3)(C6H8)

CAS  № — ,  EN  № —

(η6 -ρ-cymene)(η4 -1,3-cyclohexadiene)ruthenium(0)

Barrier Metal
Electrode Material

Ti TDMATi,   

Ti(N(CH3)2)4,

C8H24N4Ti

CAS № 3275-24-9

Tetrakis(dimethylamido)titanium(IV)

Barrier Metal
Electrode Material
TiCl4,

TiCl4

CAS №  7550-45-0

Titanium(IV) Chloride

Barrier Metal
Electrode Material

Si DIPAS,

C6H17NSi

CAS №  908831-34-5

Diisopropylamino Silane

DPT Material
Low Temp. SiO2 / SiN
E2S2,

C8H22N2Si

CAS № 27804-64-4

Bis(diethylamino)silane

DPT Material
PS

[SiH2-NH]n

CAS № 90387-00-1

Polysilazane

Gap Fill Material
D2S2

C6H18N2Si

CAS  № — ,  EN  № —

Gap Fill Material
TDMAS(Tri-DMAS)

C6H19N3Si

CAS  № 15112-89-7

Tris(dimethylamino)silane

Gap Fill Material
Low Temp. SiO2 / SiN
TIPAS

C9H25N3Si

CAS  № — ,  EN  № —

Gap Fill Material
Low Temp. SiO2 / SiN
TEMS

C9H25N3Si

CAS  № — ,  EN  № —

Gap Fill Material
Low Temp. SiO2 / SiN
DTDH-2,

C7H23NSi3

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DTDH-3,

C6H21NSi3

CAS  №  21331-86-2

Tris(dimethylsilyl)amine,

hexamethyltrisilazane

Low Temp. SiO2 / SiN
DTDN-2

C15H41N3Si3

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DTDN-3

C18H48N4Si

Tris[(diethylamino)

dimethylsilyl]amine

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DTDN-2H2,

C9H29N3Si3

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DTDN-3H3,

C9H30N4Si3

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DTDH-3H2,

C4H17NSi3

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
CSN-2,

C8H22N2Si2

CAS  № — ,  EN  № —

Low Temp. SiO2 / SiN
DMTMDSO,

C6H18O3Si2

CAS  № — ,  EN  № —

Low-k
DMDMOS,

C4H12O2Si

CAS  № — ,  EN  № —

Low-k
OMCTS,

C8H24O4Si4

CAS  № — ,  EN  № —

Low-k
TPOSL,

CH3CH2C(CH3)O)3SiOH

CAS  № — ,  EN  № —

Low-k
TMTCS,

C4H16Si4O4

CAS  № — ,  EN  № —

Low-k
4MS,

C4H12Si

CAS  № — ,  EN  № —

Etch Hard Mask Film
3MS

C3H10Si

CAS  № — ,  EN  № —

Etch Hard Mask Film

C 1-Hexene,

C6H12

CAS  №  592-41-6

1-Hexene

Etch Hard Mask Film
Propylene

C3H6

CAS  №  115-07-1

Propylene, Propene, Methylethylene, Methylethene, Prop-1-ene

Etch Hard Mask Film
DSH SOC Material

Cu MABOC,

C14H32N2O2Cu,

CAS № 872130-16-0

Bis(1-dimethylamino-2-methyl-2-butoxy)Copper(II)

Metallization Metal

Ge TDMAGe,

C8H24N4Ge

CAS № 7344-40-3

Tetrakis(dimethylamido)germanium(IV)

GST Material
TEMAGe,

Ge(N(C2H5)(CH3))4

C12H32N4Ge

CAS  № — ,  EN  № —

Tetrakis(ethylmethylamido)germanium(IV)

GST Material
BDMEDAGe,

C8H20N4Ge

CAS  № ? ,  EN  № ?

GST Material

Zr TEMAZr,

C12H32N4Zr

CAS  № 175923-04-3

Tetrakis(ethylmethylamido)zirconium(IV)

High-k for Capacitor
High-k for Metal Gate
A2HP7,

C11H23N3Zr,

Zr(C5H5)(N(CH3)2)3

CAS  №  33271-88-4

Monocyclopentadienyl tris(dimethylamino)zirconium,

Tris(dimethylamino)(cyclopentadienyl)zirconium

High-k for Capacitor
High-k for Metal Gate
Cp(Me)CpZr(OEt)2

C15H22O2Zr

CAS  № — ,  EN  № —

High-k for Capacitor

Nb TBTDEN,  

C16H39N4Nb

CAS  № ? ,  EN  № ?

High-k for Capacitor

Sb TDMASb,   

C6H18N3Sb

Sb[N(CH3)2]3

CAS  № 7289-92-1

Tris(dimethylamino)antimony

GST Material

Ta TBTDETa,

C16H39N4Ta

CAS  № ? ,  EN  № ?

Barrier Metal
Electrode Material
High-k for Metal Gate
TBTEMTa,

C13H33N4Ta

CAS  № ? ,  EN  № ?

Barrier Metal
Electrode Material

Te DIPTe,     

C6H14Te,

Te[CH(CH3)2]2

CAS № 51112-72-2

Diisopropyltelluride

GST Material
DTBUTe,

C8H18Te,

Te[C(CH3)3]2

CAS № 83817-35-0

Di(tert-butyl)telluride

GST Material

Hf TEMAHf,

C12H32N4Hf

CAS № 352535-01-4

Tetrakis(ethylmethylamido)hafnium (IV)

High-k for Capacitor
High-k for Metal Gate

Co CCTBA,

C12H10O6Co2

CAS  № — ,  EN  № —

Metallization Metal
CpCo(CO)2

C7H5CoO2

CAS  № — ,  EN  № —

Metallization Metal

Ni MABONi

C14H32N2O2Ni

CAS  №  942311-35-5

Bis(1-dimethylamino-2-methyl-2-butoxy)nickel(II),

Nickel(II) 1-dimethylamino-2-methyl-2-butoxide Bis(1-dimethylamino-2-methyl-2-butoxide)nickel(II))

Metallization Metal
Ni(EtCp)2,

C14H18Ni

CAS  № — ,  EN  № —

Metallization Metal

Se SS2,

C6H18Si2Se

CAS  №  4099-46-1

Bis(trimethylsilyl)selenide,

Hexamethyldisilaselenane Selenobis[trimethylsilane] Trimethyl(trimethylsilylselanyl)silane

GST Material

W BTBBDMT,

C2H30N4W

CAS  № — ,  EN  № —

Metallization Metal


 

Double Patterning Tech. Materials

DPT Materials

Product Structure Property MSDS
DIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H17NSi
: 131.30g/mol
: 117℃
: 55℃/106torr
: Colorless liquid
: Violently react
E2S2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H22N2Si
: 174.40g/mol
: 188℃
: 25℃/0.795torr
: Colorless liquid
: Violently react


Диффузионные барьерные материалы для полупроводников

Barrier Metal

Barrier Metal

Product Structure Property MSDS
Ru(EtCp)2 Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C14H18Ru
: 287.37g/mol
: 6℃
: 90℃/0.34torr

: Liquid (Yellow)
: React slowly
Ru-4 Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H22Ru
: 315.23g/mol
: —
: 134℃/1.0torr
: Liquid (Yellow)
: React slowly
TDMATi Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H24N4Ti
: 224.18g/mol
: 225℃
: 25℃/0.1torr
: Liquid (Pale yellow)
: React Violently
TiCl4 Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: TiCl4
: 189.69g/mol
: 136.4℃
: -24.1℃
: 20℃/9.75torr
: Liquid (Colorless)

: React Violently
TBTDETa Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H39N4Ta
: 468.46g/mol
: 95℃/0.5torr
: 120℃/1.0torr
: Liquid(Pale yellow)
: React Violently
TBTEMTa Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C13H33N4Ta
: 426.38g/mol
: 95℃/1.8torr
: N/A
: Liquid(Pale yellow)
: React Violently


Electrode Material

Electrode Material

Product Structure Property MSDS
Ru(EtCp)2 Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C14H18Ru
: 287.37g/mol
: 6℃
: 90℃/0.34torr

: Liquid (Yellow)
: React slowly
Ru-4 Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H22Ru
: 315.23g/mol
: —
: 134℃/1.0torr
: Liquid (Yellow)
: React slowly
TDMATi Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H24N4Ti
: 224.18g/mol
: 225℃
: 25℃/0.1torr
: Liquid (Pale yellow)
: React Violently
TiCl4 Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: TiCl4
: 189.69g/mol
: 136.4℃
: -24.1℃
: 20℃/9.75torr
: Liquid (Colorless)

: React Violently
TBTDETa Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H39N4Ta
: 468.46g/mol
: 95℃/0.5torr
: 120℃/1.0torr
: Liquid(Pale yellow)
: React Violently
TBTEMTa Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C13H33N4Ta
: 426.38g/mol
: 95℃/1.8torr
: N/A
: Liquid(Pale yellow)
: React Violently


Etch Hard Mask Film

Etch Hard Mask Film

Product Structure Property MSDS
1-Hexene Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H12
: 84.16g/mol
: 60~66℃
: 21℃/155torr
: Colorless liquid
: Stable
Propylene Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C3H6
: 42.08g/mol
: -47℃
: 37℃/15.4atm
: Colorless Gas
: Stable
4MS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C4H12Si
: 88.22g/mol
: 26~28℃
: —
: Colorless liquid
: Stable
3MS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C3H10Si
: 74.20g/mol
: 6.7℃
: —
: Colorless Gas
: Stable


 

GST материалы нового типа энергонезависимой памяти PRAM*

*Phase-change memory (память на основе фазового перехода) ( PRAM, PCRAM, PCM, Ovonic Unified Memory, Chalcogenide RAM, C-RAM) .GST Materials for PRAM

Product Structure Property MSDS
TDMAGe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H24N4Ge
: 248.73g/mol
: 203℃
: 14℃
: 50℃/3torr
: Liquid (Colorless)
: React Violently
TEMAGe Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Ge
: 305.05g/mol
: 260℃
: 60℃/0.52torr
: Liquid (Colorless)
: React Violently
TDMASb Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18N3Sb
: 253.81g/mol
: 32-34℃/0.45torr
: 40℃/4.9torr
: Liquid (Colorless)
: React Violently
DIPTe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H14Te
: 213.77g/mol
: 49℃/14torr
: -55℃
: 20℃/2.57torr
: Liquid (Orange)
: React slowly
DTBUTe Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H18Te
: 241.83g/mol
: 50℃/1torr
: N/A
: 40℃/1.3torr
: Liquid (Pale yellow)
: React slowly
SS2 Molecular Formula
Molecular Weight
Boiling Point
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18Si2Se
: 225.34g/mol
: 31℃/2torr
: -7℃
: N/A
: Liquid (Yellow)
: React Violently
BDMEDAGe Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H20N4Ge
: 244.88g/mol
: 214℃ : 32℃/0.5torr
: Colorless Liquid
: Slowly react

 

 



Gap Fill Materials

Semiconductor device requires dielectric materials for isolation on STI(Shallow Trench Isolation), IMD(Inter-Metal Dielectric), and PMD(Pre-Metal Dielectric). For this process CVD(Chemical Vapor Deposition) and HDP(High Density Plasma) was usually used, but it started forming void inside STI as memory density is getting high. To make uniform and void-free gap-filling, SOD(Spin on Dielectric) is used for devices below 45nm.

Gap Fill Material

Product Structure Property MSDS
PS Molecular Formula
Molecular Weight
Melting Point
Vapor Pressure
Physical State/Color
Water Reactivity
: [SiH2-NH]n
: 5000~6000g/mol
: —
: —
: Colorless Liquid
: Slowly react
D2S2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H18N2Si
: 146.3g/mol
: 134℃
: 25℃/5.63torr
: Colorless liquid
: Violently react
TDMAS(Tri-DMAS) Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H19N3Si
: 161.3g/mol
: 145℃
: 25℃/7torr
: Colorless liquid
: Slowly react
TIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 165℃
: 25℃/2.51torr
: Colorless liquid
: Violently react
TEMS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 170~171℃
: 20℃/1.2torr
: Colorless liquid
: Violently react


High-k for Capacitor

High-k dielectric material is required for obtaining sufficient cell capacitance because of high density and scaling down in DRAM. ZrO2 and HfO2are mainly used for DRAM device below 30nm.
* High dielectric constant k value makes DRAM lose capacitance less.

High-k for Metal Gate

Product Structure Property MSDS
TEMAHf Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Hf
: 411.89g/mol
: 25℃/0.1torr
: —
: Yellow Liquid
: Violently react
TEMAZr Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Zr
: 323.62g/mol
: 81℃/0.1torr
: —
: Liquid(Colorless to pale Yellow)
: Violently react
A2HP7 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C11H23N3Zr
: 288.5g/mol
: 264℃
: 90℃/0.3torr
: Yellow Liquid
: Slowly react
TBTDETa Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H39N4Ta
: 468.45g/mol
: 95℃/0.5torr
: 120℃/1.0torr
: Pale Yellow Liquid
: Slowly react
(HMDS)Hf(Py)3 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C18H42N4Si2Hf
: 549.21g/mol
: 142℃/0.8torr
: 91℃/0.1torr
: Yellow Liquid
: Slowly react
HTTB Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H36O4Hf
: 470.94g/mol
: 90℃/5torr
: —
: Liquid(Colorless )
: Slowly react


 

 High-k for Metal Gate

High-k dielectric materials is required for gate insulator of semiconductor device below 45nm because of increasing tunneling leakage current rapidly in thin insulator by scaling. HfO2 has been used for gate insulator by chipmakers such as Intel, they are studying Al, Zr, STO, BST, etc. as alternative of Hf source.

High-k for Metal Gate

Product Structure Property MSDS
TEMAHf Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Hf
: 411.89g/mol
: 25℃/0.1torr
: —
: Yellow Liquid
: Violently react
TEMAZr Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H32N4Zr
: 323.62g/mol
: 81℃/0.1torr
: —
: Liquid(Colorless to pale Yellow)
: Violently react
A2HP7 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C11H23N3Zr
: 288.5g/mol
: 264℃
: 90℃/0.3torr
: Yellow Liquid
: Slowly react
TBTDETa Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H39N4Ta
: 468.45g/mol
: 95℃/0.5torr
: 120℃/1.0torr
: Pale Yellow Liquid
: Slowly react
(HMDS)Hf(Py)3 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C18H42N4Si2Hf
: 549.21g/mol
: 142℃/0.8torr
: 91℃/0.1torr
: Yellow Liquid
: Slowly react
HTTB Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C16H36O4Hf
: 470.94g/mol
: 90℃/5torr
: —
: Liquid(Colorless )
: Slowly react


 

Low-k

Decreasing feature size in semiconductor device causes problems of RC delay and Cross talk, it makes Total Signal Delay Time. Thus, it is very important to decrease RC delay for high density and high speed performance of device. Low-k material is strongly required for inter-layer dielectric.

Low-k

Product Structure Property MSDS
DMTMDSO Molecular Formula
Molecular Weight
Boiling Point
Density
Physical State/Color
Water Reactivity
: C6H18O3Si2
: 194.38g/mol
: 139℃
: 0.9048g/ml
: Liquid/Colorless
: Slowly decompose
DMDMOS Molecular Formula
Molecular Weight
Boiling Point
Density
Physical State/Color
Water Reactivity
: C4H12O2Si
: 120.23g/mol
: 81.4℃
: 0.864g/ml
: Liquid/Colorless
: Slowly decompose
OMCTS Molecular Formula
Molecular Weight
Boiling Point
Vapor pressure
Density
Physical State/Color
Water Reactivity
: C8H24O4Si4
: 296.62g/mol
: 175℃
: 21.7℃/1torr
: 0.955g/ml
: Liquid/Colorless
: Decomposition
TPOSL Molecular Formula
Molecular Weight
Boiling Point
Vapor pressure
Density
Physical State/Color
Water Reactivity
: CH3CH2C(CH3)O)3SiOH
: 306.51g/mol
: 97℃/2.5torr
: 85℃/0.63torr
: 0.944g/ml
: Liquid/Colorless
: React slowly
TMTCS Molecular Formula
Molecular Weight
Boiling Point
Vapor pressure
Density
Physical State/Color
Water Reactivity
: C4H16Si4O4
: 240.51g/mol
: 135℃
: 20℃/7torr
: 0.986g/ml
: Liquid/colorless
: React slowly


 

Metallization Metal

Metal deposition process has been changed from PVD(Physical Vapor Deposition) to CVD(Chemical Vapor Deposition)/ALD(Atomic Layer Deposition) because of scaling down on semiconductor device. It makes metal precursors be changed either. Alpis-3 and MABOC are CVD/ALD metal precursors developed by DNF following roadmap.

* Metallization Metal Materials change : W(Resistivity 8.0 μΩ-cm) → Al(2.7 μΩ-cm) → Cu(1.7 μΩ-cm)
* Metal Deposition process change : PVD → CVD → ALD

Metallization Metal

Product Structure Property MSDS
Alpis-3 Molecular Formula
Molecular Weight
Melting Point
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C3H15AlBN
: 102.95g/mol
: 19℃
: 195°C
: 40℃/1torr
: Liquid (Colorless)
: React Violently
DMEAA Molecular Formula
Molecular Weight
Melting Point
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C4H14AlN
: 103.14g/mol
: 5℃
: 50°C/0.05torr
: 24℃/1.98torr
: Liquid (Colorless)
: React Violently
DMAH Molecular Formula
Molecular Weight
Melting Point
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C2H7Al
: 58.06g/mol
: 15℃
: 154℃
: 25℃/1.9torr
: Liquid (Colorless)
: React Violently
CCTBA Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C12H10O6Co2
: 368.07g/mol
: 52℃/0.8torr
: 40℃/0.1torr
: Liquid (Reddish brown)
: No Reaction
BTBBDMT Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C2H30N4W
: 414.23g/mol
: 60℃/0.05torr
: 40℃/0.1torr
: Liquid (Pale yellow)
: React slowly
TMA Molecular Formula
Molecular Weight
Melting Point
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C3H9Al
: 72.09g/mol
: 15°C
: 125°C

: 60℃/69.3torr
: Liquid (Colorless)
: React Violently
MABOC Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C14H32N2O2Cu
: 323.96g/mol
: 60℃/0.1torr
: 98℃/2.5torr
: Liquid (Dark purple)
: React slowly
MABONi Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C14H32N2O2Ni
: 319.19g/mol
: 148℃/3.32torr
: 80℃/0.1torr
: Liquid (Dark Green)
: React slowly
Ni(EtCp)2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C14H18Ni
: 244.99g/mol
: 75℃/0.05torr
: N/A
: Liquid (Green)
: React slowly
CpCo(CO)2 Molecular Formula
Molecular Weight
Melting Point
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C7H5CoO2
: 180.11g/mol
: -22℃
: 177℃
: 25℃/0.92torr
: Liquid(Orange)
: React slowly


 

Low Temp. SiO2/SiN

Method of manufacturing flash memory is being changed from FG(Floating Gate) to CT(Charge Trap) for device scaling below 20nm. In 2013, CT-3D may be chosen by chipmakers to continue flash memory scaling below 1x nm node. For this process SiO2 and SiN, ALD precursors, as a tunneling oxide(gate oxide) or blocking oxide is required to study.

Low Temp. SiO2/SiN

Product Structure Property MSDS
DIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H17NSi
: 131.30g/mol
: 117℃
: 55℃/106torr
: Colorless liquid
: Violently react
TEMS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 170~171℃
: 20℃/1.2torr
: Colorless liquid
: Violently react
TIPAS Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H25N3Si
: 203.40g/mol
: 165℃
: 25℃/2.51torr
: Colorless liquid
: Violently react
TDMAS (Tri-DMAS) Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H19N3Si
: 161.3g/mol
: 145℃
: 25℃/7torr
: Colorless liquid
: Slowly react
DTDH-2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C7H23NSi3
: 205.52g/mol
: 166℃
: 25℃/2.14torr
: Colorless liquid
: Violently react
DTDH-3 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C6H21NSi3
: 191.49g/mol
: 152℃
: 25℃/3.17torr
: Colorless liquid
: Slowly react
DTDN-2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C15H41N3Si3
: 347.77g/mol
: 277℃
: 90℃/0.19torr
: Colorless liquid
: Slowly react
DTDN-3 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C18H48N4Si3
: 404.87g/mol
: 313℃
: 90℃/0.04torr
: Colorless liquid
: Slowly react
DTDN-2H2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H29N3Si3
: 263.61g/mol
: 237℃
: 60℃/1.04torr
: Colorless liquid
: Slowly react
DTDN-3H3 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C9H30N4Si3
: 278.62g/mol
: 250℃
: 75℃/1.07torr
: Colorless liquid
: Slowly react
DTDH-3H2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C4H17NSi3
: 163.44g/mol
: 125℃
: 20℃/4.07torr
: Colorless liquid
: Violently react
CSN-2 Molecular Formula
Molecular Weight
Boiling Point
Vapor Pressure
Physical State/Color
Water Reactivity
: C8H22N2Si2
: 202.44g/mol
: 173-175℃
: 30℃/1.58torr
: Colorless liquid
: Violently react


 

SOC Material(Spin On Carbon Hardmask)

By scaling down in semiconductor process, lithography wavelength has been changed from G-line to ArF. To define micro pattern on wafer, hardmask has required to support and protect PR against collapse before etching substrate. Hardmask has high etch performance by high carbon content. It had been deposited by CVD equipment. These days it is coated by spin coater because of void issue of CVD process. DNF SOC material is flowable carbon polymer and it has excellent etch performance and litho performance.

SOC Material

ЎЯ Product of DNF Spin on carbon Hardmask (Product Name: DSH)
: Advantage of DNF Spin on Carbon Hard mask

— High carbon content
— Excellent Etch Performance
— Low fume
— Simple process & High throughput
— Good adhesion
— Excellent Litho Performance
— Low Cost of Ownership



Монодисперсные  нано-материалы

We have researched and developed monodisperse nanoparticles for several years to achieve high functionality of electronics and to improve the efficiency of energy-related products. Now we have several types of monodisperse nanoparticles with world top class.

Component Product Particle size(nm) Detail
General SiO2 DSO-200
DSO-300
DSO-400
DSO-600
DSO-1000
200
300
400
600
1000
TiO2 DTO-200
DTO-300
DTO-400
200
300
400
Special TiO2 @SiO2
Core-shell
DTSO-300
DTSO-400
DTSO-400
300
400
500
Hollow SiO2 DHSO-300
DHSO-400
DHSO-500
300
400
500


Антибликовое покрытие

Антибликовое покрытие на основе неорганического полисилазана для экранов (стекол) мониторов, электронных мобильных устройств и т.д. Созданная компанией DNF технология позволяет создавать антибликовое покрытие на поверхности экранов с превосходной износостойкостью и различным уровнем светопропускания.

DNF AG(Anti-glare) Coating Materials

We make anti-glare coating materials with PHPS(perhydropolysilazane) which is used for insulation material on semiconductor manufacturing process and well-known for high functional coating materials with outstanding adhesive power. It makes anti-glare property on touch panel by surface treatment after forming glass layer(SiO2).

Application

Spec. Sheet
Test Property Test Method Result
Hardness MohЎЇs hardness scale 6 Mohs
Light Transmittance Spectrophotometer(550nm) ЎГ 90%
Haze Hazemeter 2.0~5.0%
Gloss (60ЎЖ) Glossmeter ЎГ 90
Abrasion resistance Test 1kgҐЄRubberҐЄ1,000 cycle No defects
Adhesion 1mm cross cut 100/100


Функциональные защитные покрытия на основе полисилазанов и нано-материалов

Компания DNF владеет технологией производства уникального кремниевого соединения — неорганического полисилазана. Научный центр компании создал линейку многофункциональных покрытий для применения в различных сферах промышленности: строительство, бытовая техника, антикоррозийная обработка, защита автомобилей, защита стекол, гидрофобизация поверхностей. В сочетании с нано-материалами некоторые разработки DNF по своим свойствам являются передовыми и уникальными.

New Products

* Other applications : Interior Design(Artificial marble, Kitchen table, Wood furniture, etc.),
Ships & Aircrafts(Ships, Offshore constructions, Aircrafts exterior, etc.)
Product Application Description MSDS
DFC-100 Home appliances exterior
(PMMA, PS(Polystyrene),
ABS etc.)
Application to electronics exterior for anti-fouling and abrasion resistance by slip property and water repellency
DFC-200 Exterior Materials for Building
(TPO, TPU etc.)
Application to exterior like roof and glass for weatherproof and self-cleaning property by water repellency and anti-fouling
DFC-300 Display Films
(PMMA, PET etc.]
Application to TV, computer, and other display panels for optical characteristic such as high hardness, abrasion resistance, and high transparency
DFC-400 Automobile exterior
(Glass, Wheel, Panel)
Application to automobile exterior for sustainability of water repellency by forming SiO2 layer
DHC-100 Anti-glare(AG)
(Glass, Film etc.)
Anti-glare property realization with some more surface treatment after forming SiO2 layer by using polysilazane(PS) (ex) PS coating Ўж 1st curing Ўж 2nd curing Ўж surface treatment
DHC-200 Ceramic Insulating
(ZrO2, Al2O3 etc.)
Application to various ceramic goods for excellent thermal resistance(>1,100℃) and insulating property having high transparency by dipping